GaN Systems is the leader in Gallium Nitride (GaN) based power management devices, specializing in power conversion, semiconductors and transistors.
GaN Systems offers a range of Gallium Nitride high power switching diodes and transistors for clean tech power conversion applications.
GaN Systems was founded in 2008 by Girvan Patterson, John Roberts and is based Toronto, Ontario, Canada with additional offices in Aichi-ken, Japan; Shanghai, China; Gyeonggi-do, and Korea; Hsinchu City.
GaN Systems offers 650 V E-HEMT and 100 V E-HEMT transistors and wireless power amplifiers. Its products are used in consumer, enterprise, industrial, solar/wind/smartgrid, and transportation power conversion applications.
GaN Systems’ approach to a new generation of GaN power transistors is leading an industry-changing shift in both the short-term and ‘near future’ relationship between technology’s power systems and energy–creating significant product and system-wide changes.
GaN Systems makes possible the design of smaller, lower cost, more efficient power systems. It serves consumer brand and enterprise equipment manufacturers in Japan, Taiwan, China, and internationally.
GaN Systems was awarded 2019 European New Product Innovation Award for developing advanced GaN power semiconductor solutions by Frost & Sullivan.